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Form of report: PDF file, around 15,000 English words
Author: Semiconductor Industry Research Center, CCID Consulting
Price: USD 1,700 for hardcopy version and USD 1,900 for digital version
Research field: Power management IC and power transistor
Enterprises involved: Fairchild, IR, TI, Linear, On Semiconductor and so on
Report Highlights
Power IC and power devices are the most active electronics devices in the market. Their market grows faster than the semiconductor market.
By product, power IC and MOSFET are widely used. They are used in almost all electronics products. In recent years, with the rising output of whole systems, these 2 products are also developing very fast. Power IC and MOSFET are the most important products in China’s power semiconductor market. In addition, IGBT, rectifier, thyristor and bipolar transistor also get some market shares. Most power semiconductor makers in the world are European, American, Japanese and Taiwan companies. In recent years, Taiwan’s power device makes have been developing rather fast, and narrowed their technological gap with leading companies in the world. Products are mainly used on computer main board, display card and LCD equipment.
In the face of competitions and market changes and challenges, the 2006-2007 Annual Report on China's Semiconductor Power Device Market released by CCID Consulting will help firms, investors and the industry chain more accurately grasp the growth pulses of China's power device market, and more profoundly comb the trajectories of change in the related links of the industry chain—
With rich and detailed market description data, examine annual market changes from the aspects of overall market size, product structure, application structure and key product market, and project market development trends.
Highlight the performance of major brands in 2006, sum up enterprises’ successes and failures from the multiple dimensions of key product share, competition pattern and development strategies and review the elements for attaining market leadership.
Make in-depth quantitative forecast for the future market, establish regression models and make expert verification for the overall market and its segments, and draw quantitative results for the market trend.
Framework of the Report
Main Conclusions
Key Findings
I. Overview of the Global Power Device Market
(I) Market size and characteristics
1. Market size and growth
2. Market characteristics
(II) Major countries and regions
1. U.S.A
2. Europe
3. Japan
II. Overview of China’s Power Device Market in 2006
(I) Market size and characteristics
1. Market size and growth, 2002-2006
2. Market characteristics in 2006
(II) Market structure in 2006
1. Product structure
2. Application structure
III. Overview of China’s Key Power Device Market Segments
(I) MOSFET
1. Market size and growth
2. Product structure
3. Application structure
4. Packaging structure
(II) IGBT
1. Market size and growth
2. Product structure
3. Application structure
4. Packaging structure
(III) Power supply IC
III. Forecast for China’s Power Device Market, 2007-2011
(I) Market trend, 2007-2011
(I) Forecast for market size
(II) Forecast for market structure
1. Product structure
2. Application structure
V. Competitions in China’s Power Device Market
(I) Overall competition pattern
(II) Competition pattern between key products
(III) Key Firms
1. IR
2. Fairchild
3. ……
VI. Recommendations from CCID Consulting
List of Tables
Size of China’s Power Device Market, 2004-2006
Product Structure of China’s Power Device Market in 2006
Application Structure of China’s Power Device Market in 2006
Product Structure of China’s IGBT Market in 2006
Product Structure of China’s MOSFE Market in 2006
……
List of Figures
Course of Development of Power Semiconductor Devices
Development Directions of Power Semiconductor Devices
Size and Growth of China’s Power Device Market, 2004-2006
Application Structure of China’s IGBT Market in 2006
Application Structure of China’s MOSFE Market in 2006
……
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